Onsemi (FDS5672) Power MOSFET, N Channel, 60 V, 12 A, 0.0088 ohm

Power MOSFET, N Channel, 60 V, 12 A, 0.0088 ohm, SOIC, Surface Mount Product Overview The FDS5672 is a N-channel MOSFET produced using PowerTrench® process. It designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast switching speed. Low gate charge High performance Trench technology for extremely low RDS (ON) High power and current handing capability Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 12A Drain Source Voltage Vds: 60V Drain Source On State Resistance: 0.0088ohm On Resistance Rds(on): 0.0088ohm Rds(on) Test Voltage: 10V Transistor Mounting: Surface Mount Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 2.5W Transistor Case Style: SOIC Power Dissipation: 2.5W No. of Pins: 8Pins Operating Temperature Max: 150°C MSL: MSL 1 - Unlimited