Infineon (IRFB3206PBF) Power MOSFET, N Channel, 60 V, 210 A, 0.003 ohm

Power MOSFET, N Channel, 60 V, 210 A, 0.003 ohm, TO-220AB, Through Hole Product Overview The IRFB3206PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits. Fully characterized capacitance and avalanche SOA Enhanced body diode dV/dt and di/dt capability Halogen-free Applications Power Management, Motor Drive & Control Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 210A Drain Source Voltage Vds: 60V Drain Source On State Resistance: 0.003ohm On Resistance Rds(on): 0.003ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 300W Transistor Case Style: TO-220AB Power Dissipation: 300W No. of Pins: 3Pins Operating Temperature Max: 175°C