Infineon (IRLZ34NPBF) Power MOSFET, N Channel, 55 V, 27 A, 0.035 ohm

Power MOSFET, N Channel, 55 V, 27 A, 0.035 ohm, TO-220AB, Through Hole Product Overview The IRLZ34NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. Dynamic dv/dt rating Fully avalanche rated Logic-level gate drive Advanced process technology Applications Power Management Product Information Channel Type: N Channel Transistor Polarity: N Channel Drain Source Voltage Vds: 55V Continuous Drain Current Id: 27A Drain Source On State Resistance: 0.035ohm On Resistance Rds(on): 0.035ohm Transistor Case Style: TO-220AB Transistor Mounting: Through Hole Rds(on) Test Voltage: 10V Gate Source Threshold Voltage Max: 2V Power Dissipation Pd: 56W Power Dissipation: 56W No. of Pins: 3Pins Operating Temperature Max: 175°C