Stmicroelectronics (STW26NM60N) Power MOSFET, N Channel, 600 V, 20 A

Power MOSFET, N Channel, 600 V, 20 A, 0.135 ohm, TO-247, Through Hole Product Overview The STW26NM60N is a 600V N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements. 100% Avalanche tested Low input capacitance and gate charge Low gate input resistance Applications Industrial Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 20A Drain Source Voltage Vds: 600V Drain Source On State Resistance: 0.135ohm On Resistance Rds(on): 0.135ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 3V Power Dissipation Pd: 140W Transistor Case Style: TO-247 Power Dissipation: 140W No. of Pins: 3Pins Operating Temperature Max: 150°C