STMicroelectronics (BDX33C) Bipolar (BJT) Single Transistor, NPN, 100V, 10A
STMicroelectronics (BDX33C) Bipolar (BJT) Single Transistor, NPN, 100V, 10A
Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V, 10 A, 70 W, TO-220, Through Hole Product Overview The BDX33C is a NPN complementary silicon power Darlington Transistor with built-in epitaxial planar technology. Designed for use in power linear and switching applications. Complement to BDX34C 0.25A Base current Applications Audio, Industrial Product Information Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 100V DC Collector Current: 10A Power Dissipation Pd: 70W Transistor Case Style: TO-220 Transistor Mounting: Through Hole No. of Pins: 3Pins Transition Frequency ft: - DC Current Gain hFE: 750hFE Operating Temperature Max: 150°C Product Range: - Automotive Qualification Standard: - MSL: -