Onsemi (MJ11032G) Bipolar (BJT) Single Transistor, NPN, 120V, 50A
Onsemi (MJ11032G) Bipolar (BJT) Single Transistor, NPN, 120V, 50A
Product Overview The MJ11032G is a NPN Darlington Power Transistor for use as output devices in complementary general purpose amplifier applications. High DC current gain Monolithic construction with built-in base-emitter shunt resistor Product Information Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 120V Transition Frequency ft: - Power Dissipation Pd: 300W DC Collector Current: 50A DC Current Gain hFE: 18000hFE Transistor Mounting: Through Hole Transistor Case Style: TO-204 No. of Pins: 2Pins Operating Temperature Max: 200°C Product Range: - Automotive Qualification Standard: - MSL: -