Onsemi (MJ11028G) Bipolar (BJT) Single Transistor, NPN, 60 V, 50 A
Onsemi (MJ11028G) Bipolar (BJT) Single Transistor, NPN, 60 V, 50 A
Product Overview The MJ11028G is an NPN Complementary Silicon Darlington Power Transistor for use as output devices in complementary general purpose amplifier applications. This transistor features monolithic construction with built-in base-emitter shunt resistor. High DC current gain Diode protection to rated IC Product Information Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 60V Transition Frequency ft: - Power Dissipation Pd: 300W DC Collector Current: 50A DC Current Gain hFE: 400hFE Transistor Mounting: Through Hole Transistor Case Style: TO-204 No. of Pins: 2Pins Operating Temperature Max: 200°C Product Range: - Automotive Qualification Standard: - MSL: -