Infineon (IRS2302SPBF) Igbt/Mosfet Gate Driver, High Side, 5V-20V Supply

IGBT/MOSFET Gate Driver, High Side, 5V-20V Supply, 350mA Out, 200ns Delay, SOIC-8 Product Overview The IRS2302SPBF is a high voltage high speed power MOSFET and IGBT Half-bridge Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V. Floating channel designed for bootstrap operation Tolerant to negative transient voltage (dV/dt immune) Under-voltage lockout for both channels 3.3, 5 and 15V Input logic compatible Cross-conduction prevention logic Matched propagation delay for both channels High-side output in phase with input Internal 450ns dead-time Lower di/dt gate driver for better noise immunity Shut down input turns-OFF both channels Applications Motor Drive & Control, Power Management Product Information No. of Channels: 2Channels Driver Configuration: High Side Power Switch Type: IGBT, MOSFET Supply Voltage Min: 5V Supply Voltage Max: 20V Driver Case Style: SOIC Input Type: Non-Inverting IC Case / Package: SOIC No. of Pins: 8Pins Source Current: 200mA Input Delay: 220ns Output Delay: 200ns Sink Current: 350mA Operating Temperature Min: -40°C Operating Temperature Max: 125°C Product Range: -