Infineon (IR2112PBF) Dual Power IC, High Side And Low Side, 10V-20V Supply

Dual Power IC, High Side And Low Side, 10V-20V Supply, 420mA Out, 105ns Delay, DIP-14 Product Overview The IR2112PBF is a high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V. Floating channel designed for bootstrap operation Tolerant to negative transient voltage DV/DT Immune Under-voltage lockout for both channels CMOS Schmitt-triggered inputs with pull-down Cycle-by-cycle edge-triggered shutdown logic Matched propagation delay for both channels Outputs in phase with inputs Applications Industrial, Consumer Electronics, Alternative Energy, Power Management Product Information No. of Channels: 2Channels Driver Configuration: High Side and Low Side Power Switch Type: IGBT, MOSFET Supply Voltage Min: 10V Supply Voltage Max: 20V Driver Case Style: DIP Input Type: Non-Inverting IC Case / Package: DIP No. of Pins: 14Pins Source Current: 250mA Input Delay: 125ns Output Delay: 105ns Sink Current: 500mA Operating Temperature Min: -40°C Operating Temperature Max: 125°C