Infineon (IR2104SPBF) Dual MOSFET IC, High Side And Low Side, 10V-20V
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  • Infineon (IR2104SPBF) Dual MOSFET IC, High Side And Low Side, 10V-20V

Infineon (IR2104SPBF) Dual MOSFET IC, High Side And Low Side, 10V-20V

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Infineon (IR2104SPBF) Dual MOSFET IC, High Side And Low Side, 10V-20V

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Dual MOSFET IC, High Side And Low Side, 10V-20V Supply, 360mA Out, 150ns Delay, SOIC-8 Product Overview The IR2104SPBF is a high voltage high speed power MOSFET and IGBT Driver with dependent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output and down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates from 10 to 600V. Tolerant to negative transient voltage DV/DT Immune Under-voltage lockout Cross-conduction prevention logic Internally set dead-time High side output in phase with input Shut down input turns OFF both channels Matched propagation delay for both channels Applications Industrial, Consumer Electronics, Alternative Energy, Power Management Product Information No. of Channels: 2Channels Driver Configuration: Half Bridge Power Switch Type: MOSFET Supply Voltage Min: 10V Supply Voltage Max: 20V Driver Case Style: SOIC Input Type: Non-Inverting IC Case / Package: SOIC No. of Pins: 8Pins IC Mounting: Surface Mount Source Current: 210mA Input Delay: 680ns Output Delay: 150ns Sink Current: 360mA Operating Temperature Min: -40°C Operating Temperature Max: 125°C MSL: MSL 2 - 1 year

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