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Infineon (IR2183PBF) Dual MOSFET Driver, High Side And Low Side
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  • Infineon (IR2183PBF) Dual MOSFET Driver, High Side And Low Side

Infineon (IR2183PBF) Dual MOSFET Driver, High Side And Low Side

R563.58
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Infineon (IR2183PBF) Dual MOSFET Driver, High Side And Low Side

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Dual MOSFET Driver, High Side And Low Side, 10V-20V Supply, 2.3A Out, 220ns Delay, DIP-8 Product Overview The IR2183PBF is a high voltage high speed power MOSFET and IGBT Half-bridge Gate Driver with dependent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V. Tolerant to negative transient voltage DV/DT Immune Under-voltage lockout for both channels Matched propagation delay for both channels Lower DI/DT gate driver for better noise immunity Logic and power ground ±5V offset Applications Industrial, Consumer Electronics, Alternative Energy, Power Management Product Information No. of Channels: 2Channels Driver Configuration: High Side and Low Side Power Switch Type: IGBT, MOSFET Supply Voltage Min: 10V Supply Voltage Max: 20V Driver Case Style: DIP Input Type: Inverting, Non-Inverting IC Case / Package: DIP No. of Pins: 8Pins IC Mounting: Through Hole Source Current: 1.9A Input Delay: 180ns Output Delay: 220ns Sink Current: 2.3A Operating Temperature Min: -40°C Operating Temperature Max: 125°C

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