Infineon (IRFP250NPBF) Power MOSFET, N Channel, 200 V, 30 A, 0.075 ohm

Power MOSFET, N Channel, 200 V, 30 A, 0.075 ohm, TO-247AC, Through Hole Product Overview The IRFP250NPBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications. Drain to source voltage (Vds) of 200V Gate to source voltage of ±20V On resistance Rds(on) of 75mohm at Vgs 10V Power dissipation Pd of 214W at 25°C Continuous drain current Id of 30A at Vgs 10V and 25°C Operating junction temperature range from -55°C to 175°C Product Information Channel Type: N Channel Transistor Polarity: N Channel Drain Source Voltage Vds: 200V Continuous Drain Current Id: 30A Drain Source On State Resistance: 0.075ohm On Resistance Rds(on): 0.075ohm Transistor Case Style: TO-247AC Transistor Mounting: Through Hole Rds(on) Test Voltage: 10V Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 214W Power Dissipation: 214W No. of Pins: 3Pins Operating Temperature Max: 175°C